Light-emitting element and the manufacturing method thereof

US8344392B2 · kind B2 · utility

Assignee

• Epistar Corporation · TW

Inventors

• Jui-Hung Yeh · Hsinchu, TW
• Chun-Kai Wang · Bellevue, US
• Wei-Yu Yen · Taichung, TW
• Yu-Yao Lin · Hsinchu, TW
• Chien-Fu Shen · Hsinchu, TW
• De-Shan Kuo · Hsinchu, TW
• Ting-Chia Ko · Hsinchu, TW

Key dates

• Filing date: May 12, 2011
• Grant date: Jan 1, 2013
• Expiry date: May 12, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/8314

Abstract

A light-emitting element includes a light-emitting stack includes: a first semiconductor layer; an active layer formed on the first semiconductor layer; and a second semiconductor layer formed on the active layer; a recess structure formed through the second semiconductor layer, the active layer, and extended in the first semiconductor layer, wherein the first semiconductor layer includes a contact region defined by the recess structure; a first electrode structure including a first contact portion on the contact region of the first semiconductor layer, and a second contact portion laterally extended from the first contact portion into the first semiconductor layer; and a dielectric layer formed on side surfaces of the second semiconductor layer and the active layer to insulate the second semiconductor layer and the active layer from the first contact portion.