Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region
US8344446B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Dec 13, 2007 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Aug 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Provided is an excellent nonvolatile storage device having advantageous in miniaturization and less variation in initial threshold value, and exhibiting a high writing efficiency, without an erasing failure and a retention failure. The nonvolatile storage device is characterized by including a film stack extending from between a semiconductor substrate and a gate electrode onto at least a surface of the gate electrode lying on a first impurity diffusion region side, the film stack including a charge accumulating layer and a tunnel insulating film sequentially from a gate electrode side.
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