Inventor · Tokyo, JP

Yukihide Tsuji

30Patents
4h-index
13Co-inventors
56Inventor score

Filing activity: Dec 13, 2007 → May 14, 2019

Most-cited inventions

PatentTitleAreaCited byStatus
US9478309B2 Magnetic-domain-wall-displacement memory cell and initializing method therefor Electricity 12 Active
US8586958B2 Switching element and manufacturing method thereof Physics 7 Active
US8212309B2 Non-volatile memory device and method of manufacturing same Physics 7 Active
US8344446B2 Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region Electricity 5 Active
US9837816B2 Semiconductor device, power supply control method of semiconductor device, and sensor node Electricity 2 Active
US9536584B2 Nonvolatile logic gate device Physics 2 Active
US10044355B2 Reconfigurable circuit with crossbar switches including non-volatile resistive switches Physics 1 Active
US9135988B2 Semiconductor device and control method of the same Electricity 1 Active
US9100013B2 Nonvolatile resistor network assembly and nonvolatile logic gate with increased fault tolerance using the same Electricity 1 Active
US10037789B2 Magnetic memory and method for writing data into magnetic memory element Electricity 1 Active
US9898070B2 Semiconductor integrated circuit and power supply control method therefor Emerging Cross-Sectional Technologies 1 Active
US10027326B2 Reconfigurable circuit Electricity 1 Active
US8878153B2 Variable resistance element having gradient of diffusion coefficient of ion conducting layer Electricity 1 Active
US10748614B2 Semiconductor device and programming method therefor Physics 0 Active
US10074421B2 Crossbar switch type memory circuit, look-up table circuit, and programming method Physics 0 Active
US10740435B2 Programmable logic integrated circuit, design support system, and configuration method Physics 0 Active
US8796129B2 Nonvolatile storage device and method for manufacturing the same in which insulating film is located between first and second impurity diffusion regions but absent on first impurity diffusion region Electricity 0 Active
US11481535B2 Numerical information generation apparatus, numerical information generation method, and program Electricity 0 Active
US11018671B2 Reconfigurable circuit and the method for using the same Electricity 0 Active
US10396798B2 Reconfigurable circuit Electricity 0 Active
US10879902B2 Reconfigurable circuit using nonvolatile resistive switches Electricity 0 Active
US10305485B2 Programmable logic integrated circuit, semiconductor device, and characterization method Electricity 0 Active
US9692422B2 Programmable logic integrated circuit Electricity 0 Active
US10812076B2 Logic integrated circuit and semiconductor device Electricity 0 Active
US10720925B2 Integrated circuit Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.