Resistive memory device and method for fabricating the same
US8345463B2 · kind B2 · utility
5Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2009 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Feb 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A resistive memory device includes: a bottom electrode formed over a substrate; and an insulation layer having a hole structure formed over the substrate structure. Herein, the hole structure exposes the bottom electrode, has sidewalls of positive slope, and has a bottom width equal to or smaller than a width of the bottom electrode; a resistive layer formed over the hole structure; and an upper electrode formed over the resistive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.