Magnetic memory
US8347175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Jan 1, 2013 |
| Priority date | — |
| Expiry date | Jun 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/19
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory includes a magnetoresistive effect element including a first magnetic layer invariable in magnetization direction, a second magnetic layer variable in magnetization direction, and an intermediate layer between the first magnetic layer and the second magnetic layer, an error detecting and correcting circuit which detects whether first data in the magnetoresistive effect element includes any error and which outputs error-corrected second data when the first data includes an error, a writing circuit which generates one of the first write current including a first pulse width and the second write current including a second pulse width greater than the first pulse width, and a control circuit which controls the writing circuit to pass the second write current through the magnetoresistive effect element when the second data is written into the magnetoresistive effect element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.