Method for detecting diameter of single crystal, single-crystal manufacturing method by using the same and single-crystal manufacturing apparatus
US8349074B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Sep 24, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1032
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.