Method of manufacturing near-field light generator including waveguide and plasmon generator
US8349198B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | May 12, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y20/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A near-field light generator includes: a waveguide; a clad layer having a penetrating opening and disposed on the waveguide; a plasmon generator accommodated in the opening; and a dielectric film interposed between the plasmon generator and each of the waveguide and the clad layer. In a method of manufacturing the near-field light generator, an initial clad layer is initially formed on the waveguide, and then the initial clad layer is taper-etched by RIE to form a recess that does not reach the top surface of the waveguide. Subsequently, the recess is etched by wet etching until the top surface of the waveguide is exposed in part. Next, the dielectric film is formed in the opening, and the plasmon generator is formed on the dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.