Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
US8349633B1 · kind B1 · utility
1Cited by
4References
19Claims
0Family size
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Key dates
| Filing date | May 26, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.