Mono-silicon solar cells
US8349644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2008 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Aug 21, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for producing a backside contact of a single p-n junction photovoltaic solar cell is provided. The method includes the steps of: providing a p-type substrate having a back surface; providing a plurality of p+ diffusion regions at the back surface of the substrate; providing a plurality of n+ diffusion regions at the back surface of the substrate in an alternate pattern with the p+ diffusion regions; providing an oxide layer over the p+ and n+ regions; providing an insulating layer over the back surface of the substrate; providing at least one first metal contact at the back surface for the p+ diffusion regions; and providing at least one second metal contact at the back surface for the n+ diffusion regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.