Method for fabricating a structure for a semiconductor device using a halogen based precursor
US8349726B2 · kind B2 · utility
3Cited by
1References
24Claims
0Family size
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Inventor
Key dates
| Filing date | Sep 15, 2006 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Jul 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is described a method of fabricating a dual damascene structure for a semiconductor device. A halogen based pre-cursor is used during vapor deposition of a diffusion barrier layer in a trench or via formed in a substrate. Residual halogen from the deposition is allowed to remain on the barrier layer and is used to catalyse growth of a metal layer on the barrier layer to fill the trench or via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.