Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device
US8350244B2 · kind B2 · utility
1Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | May 24, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Nov 23, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.