Resistive random access memory having a solid solution layer and method of manufacturing the same
US8350247B2 · kind B2 · utility
6Cited by
11References
11Claims
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Key dates
| Filing date | Nov 15, 2007 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/30
Abstract
A resistive random access memory (RRAM) having a solid solution layer and a method of manufacturing the RRAM are provided. The RRAM includes a lower electrode, a solid solution layer on the lower electrode, a resistive layer on the solid solution layer, and an upper electrode on the resistive layer. The method of manufacturing the RRAM includes forming a lower electrode, forming a solid solution layer on the lower electrode, forming a resistive layer on the solid layer and forming an upper electrode on the resistive layer, wherein the RRAM is formed of a transition metal solid solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.