Coalesced nanowire structures with interstitial voids and method for manufacturing the same
US8350249B1 · kind B1 · utility
22Cited by
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14Claims
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Key dates
| Filing date | Sep 26, 2011 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Sep 26, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/762
Abstract
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.