Nanowire sized opto-electronic structure and method for manufacturing the same

US8350251B1 · kind B1 · utility

Assignee

• GLO AB · SE

Inventors

• Truls Lowgren · Palo Alto, US
• Ghulam Hasnain · Palo Alto, US

Key dates

• Filing date: Oct 3, 2011
• Grant date: Jan 8, 2013
• Expiry date: Oct 3, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/813

Abstract

An opto-electric structure includes a plurality of nano elements arranged side by side on a support layer, where each nano element includes at least a first conductivity type semiconductor nano sized core, and where the core and a second conductivity type semiconductor form a pn or pin junction. A first electrode layer that extends over the plurality of nano elements and is in electrical contact with at least a portion of the second conductivity type semiconductor, and a mirror provided on a second conductivity type semiconductor side of the structure.