Device structure including high-thermal-conductivity substrate

US8350295B1 · kind B1 · utility

Assignee

• TriQuint Semiconductor, Inc. · US

Inventors

• Paul Saunier · Garland, US
• Edward A. Beam, III · Dallas, US
• Deep C. Dumka · Richardson, US

Key dates

• Filing date: Feb 13, 2008
• Grant date: Jan 8, 2013
• Expiry date: May 22, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85

Abstract

Methods and apparatuses for forming a device structure including a high-thermal-conductivity substrate are disclosed herein. A method forming such a device structure may comprise forming an active layer over a first substrate in a manner such that a frontside of the active layer faces the first substrate and a backside of the active layer faces away from the first substrate, forming a second substrate over the backside of the active layer, and removing the first substrate to expose the frontside of the active layer. Other embodiments are described and claimed.