Junction-field-effect-transistor devices and methods of manufacturing the same
US8350304B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Jun 7, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Dec 6, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/83
Abstract
A junction-field-effect-transistor (JFET) device includes a substrate of a first-type impurity, a first well region of a second-type impurity in the substrate, a pair of second well regions of the first-type impurity separated from each other in the first well region, a third well region of the first-type impurity between the pair of second well regions, a first diffused region of the second-type impurity between the third well region and one of the second well regions, and a second diffused region of the second-type impurity between the third well region and the other one of the second well regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.