Semiconductor device and method of forming the same
US8350337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Dec 31, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a substrate, a first device, a second device and an interlayer dielectric layer is provided. The substrate has a first area and a second area. The first device is disposed in the first area of the substrate and includes a first dielectric layer on the substrate and a metal gate on the first dielectric layer. The second device is in the second area of the substrate and includes a second dielectric layer on the substrate and, a polysilicon layer on the second dielectric layer. It is noted that the height of the polysilicon layer is less than that of the metal gate of the first device. The interlayer dielectric layer covers the second device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.