Semiconductor device using an aluminum interconnect to form through-silicon vias
US8350359B2 · kind B2 · utility
3Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2009 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | May 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An aluminum lateral interconnect of a Back End of the Line (BEOL) is used to define the x and y dimensions of a through-silicon via in a semiconductor chip formed in a silicon substrate. The TSV includes one or more aluminum annulus formed on a surface of the substrate, and a deep trench in the substrate having a diameter that is determined by the diameter of the aluminum annulus. The annulus can also be provided with a conductive strap upon which a capacitor can be formed. The strap can also be used to provide a connection of the TSV to other BEOL interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.