Method of programming nonvolatile memory device
US8351267B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Apr 14, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5628
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a nonvolatile memory device comprises performing a first program operation on first memory cells and second memory cells so that threshold voltages of the first and second memory cells have a first reference level lower than a first target level, the first memory cells having the first target level as a first target level, and the second memory cells having a second target level higher than the first target level as a second target level; performing a second program operation on the second memory cells so that the threshold voltages of the second memory cells have a second reference level lower than the second target level; and performing a third program operation on the first and second memory cells to have the respective target levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.