Model library implementation and methodology for worst case performance modeling for SRAM cells
US8352895B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2010 |
| Grant date | Jan 8, 2013 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/367
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Worst case performance of an SRAM cell may be simulated more accurately with less intensive computations. An embodiment includes determining, by a processor, a process corner G of an SRAM cell, having pull-down, pass-gate, and pull-up devices, process corner G being defined as the worst performance of the cell when only global variations of parameters of the SRAM cell are included, setting each of the pull-down, pass-gate, and pull-up devices at process corner G, performing, on the processor, a number of Monte Carlo simulations of the SRAM cell devices around process corner G with only local variations of the parameters, generating a normal probability distribution for Iread based on the local Monte Carlo simulations around process corner G, extrapolating the worst case Iread from the normal probability distribution of Iread to define a process corner SRM representing a slowest SRAM bit on a chip, and validating an SRAM cell based on the SRM corner. Embodiments further include creating a library of SRM corner values for multiple SRAM cells, and validating an SRAM cell by selecting an SRM corner from the library. Embodiments further include linearly scaling the SRM corner value with…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.