Method for forming a toroidal inductor in a semiconductor substrate
US8354325B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/20
Abstract
A toroidal inductor formed in a semiconductor substrate. Through-silicon vias are used to connect metal layers formed on top and bottom surfaces of the semiconductor substrate. In one embodiment, the vias are elongated and laid out in two concentric circles, an inner circle enclosed by an outer circle. The vias of the outer concentric circle are longer than the vias of the inner circle so that spaces between vias are the same for both circles. In another embodiment, each elongated via may include a plurality of circular vias formed in a line. Metals layers on the top and bottom of the semiconductor substrate are patterned to form wedge shaped connectors between the inner and outer vias to form the spirals of the toroidal inductor. The wedge shaped connectors with elongated vias allow spacing between spirals to be constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.