Efficient thermal management and packaging for group III nitride based UV devices
US8354687B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2009 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Feb 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A high efficiency light emitting diode with an ultraviolet light-emitting structure. The structure has a first layer with a first conductivity comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; a second layer with a second conductivity comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1; and a light emitting quantum well region between said first layer and said second layer comprising Al1-x-yInyGaxN wherein 0≦x≦1 and 0≦y≦1. The diode also has a carrier bonded to said first layer and said second layer wherein said carrier has a thermal conductivity of at least 100 W/mK and said carrier is resistive between a bonding location of said first layer and a second bonding location of said second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.