Semiconductor memory device
US8354706B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2010 |
| Grant date | Jan 15, 2013 |
| Priority date | — |
| Expiry date | Apr 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device according to an embodiment of the present invention includes a substrate, a first gate insulator formed on the substrate and serving as an F-N (Fowler-Nordheim) tunneling film, a first floating gate formed on the first gate insulator, a second gate insulator formed on the first floating gate and serving as an F-N tunneling film, a second floating gate formed on the second gate insulator, an intergate insulator formed on the second floating gate and serving as a charge blocking film, and a control gate formed on the intergate insulator, at least one of the first and second floating gates including a metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.