Semiconductor component with improved robustness

US8354709B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Josef Lutz · Rohrau, AT

Key dates

• Filing date: Oct 1, 2007
• Grant date: Jan 15, 2013
• Expiry date: Jun 13, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

One aspect is a semiconductor component including a terminal zone; a drift zone of a first conduction type, which is doped more weakly than the terminal zone; a component junction between the drift zone and a further component zone; and a charge carrier compensation zone of the first conduction type, which is arranged between the drift zone and the terminal zone and whose doping concentration is lower than that of the terminal zone, and whose doping concentration increases at least in sections in the direction of the terminal zone from a minimum doping concentration to a maximum doping concentration, the minimum doping concentration being more than 1016 cm−3.