Patent · US Active

Field-effect device and manufacturing method thereof

US8354710B2 · kind B2 · utility

3Cited by

15References

33Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Mayank Shrivastava · South Burlington, US
Harald Gossner · Riemerling, DE
Ramgopal Rao · Mumbai, IN
Maryam Shojaei Baghini · Mumbai, IN

Key dates

Filing date	Aug 8, 2008
Grant date	Jan 15, 2013
Priority date	—
Expiry date	Mar 2, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/371
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Embodiments relate to a field-effect transistor that includes a body region, a first source/drain region of a first conductivity type, a second source/drain region of the first conductivity type, and a pocket implant region adjacent to the first source/drain region, the pocket implant region being of a second conductivity type, wherein the second conductivity type is different from the first conductivity type. The body region physically contacts the pocket implant region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.