Gate-all-around CMOSFET devices

US8354721B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Deyuan Xiao · Shanghai, CN
• Xi Wang · Shanghai, CN

Key dates

• Filing date: Feb 11, 2010
• Grant date: Jan 15, 2013
• Expiry date: Jun 7, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A GAA (Gate-All-Around) CMOSFET device includes a semiconductor substrate, a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The surfaces of the first channel and the second channel are substantially surrounded by the gate region. A buried insulation layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the semiconductor substrate to isolate them from one another. The structure is simple, compact and highly integrated, has high carrier mobility, and avoids polysilicon gate depletion and short channel effect.