Patent · US Active

MIM transistor

US8354725B2 · kind B2 · utility

0Cited by
10References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 4, 2011
Grant dateJan 15, 2013
Priority date—
Expiry dateFeb 13, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N99/03

Abstract

The invention concerns a conducting layer having a thickness of between 1 and 5 atoms, an insulated gate being formed over a part of the conducting layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.