Ion source and plasma processing apparatus
US8356575B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2006 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Nov 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
It is an object of this invention to provide an ion source and a plasma processing apparatus capable of generating stable and long-life plasma. The ion source is provided with a high-frequency antenna (16) installed on the outer peripheral side of a partition wall (15) made of a dielectric material and partitioning a plasma generating chamber (14) and a shield body (26) made of a dielectric material and preventing deposition on the inner peripheral surface of the partition wall (15) facing the high-frequency antenna (16) inside the plasma generating chamber (14). The structure made of a dielectric material can prevent an increase in high-frequency power required for inductive coupling with plasma. The shield body (26) is formed with a slot (26a) in a direction crossing a winding direction of the high-frequency antenna (16). Since this arrangement can prevent continuous deposition on the inner surface of the partition wall in the winding direction of the high-frequency antenna, an induction loss between the high-frequency antenna and the plasma generating chamber can be effectively prevented even if the deposited film is made of a conductive material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.