Method for manufacturing a semiconductor device using an Al-Zn connecting material
US8356742B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 8, 2011 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a connecting material of the present invention, a Zn series alloy layer is formed on an outermost surface of an Al series alloy layer. In particular, in the connecting material, an Al content of the Al series alloy layer is 99 to 100 wt. % or a Zn content of the Zn series alloy layer is 90 to 100 wt. %. By using this connecting material, the formation of an Al oxide film on the surface of the connecting material at the time of the connection can be suppressed, and preferable wetness that cannot be obtained with the Zn—Al alloy can be obtained. Further, a high connection reliability can be achieved when an Al series alloy layer is left after the connection, since the soft Al thereof functions as a stress buffer material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.