Method to improve the reliability of the breakdown voltage in high voltage devices
US8357562B2 · kind B2 · utility
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14References
16Claims
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Key dates
| Filing date | Jan 28, 2011 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/23
Abstract
A structure to diminish high voltage instability in a high voltage device when under stress includes an amorphous silicon layer over a field oxide on the high voltage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.