Method of fabricating epitaxial structures
US8357574B2 · kind B2 · utility
5Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2010 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Oct 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0275
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an integrated device is disclosed. The disclosed method provides improved formation selectivity of epitaxial films over a pre-determined region designed for forming an epi film and a protective layer preferred not to form an epi, polycrystalline, or amorphous film thereon during an epi film formation process. In an embodiment, the improved formation selectivity is achieved by providing a nitrogen-rich protective layer to decrease the amount of growth epi, polycrystalline, or amorphous film thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.