Semiconductor device and method of manufacturing semiconductor device
US8357580B2 · kind B2 · utility
1Cited by
4References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2009 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Apr 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate; a first gate insulation film formed on the semiconductor substrate; a second gate insulation film formed on the semiconductor substrate; a first gate electrode formed on the first gate insulation film and fully silicided; and a second gate electrode formed on the second gate insulation film and fully silicided, a gate length or a gate width of the second gate electrode being larger than that of the first gate electrode, and a thickness of the second gate electrode being smaller than that of the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.