Spin transistor and method of manufacturing the same
US8357962B2 · kind B2 · utility
46Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2010 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Feb 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/86
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.