Trench gate MOSFET and method of manufacturing the same
US8357971B2 · kind B2 · utility
3Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Trench gate MOS field-effect transistor having a narrow, lightly doped, region extending from a channel accommodating region (3) of same conductivity type immediately adjacent the trench sidewall. The narrow region may be self-aligned to the top of a lower polysilicon shield region in the trench or may extend the complete depth of the trench. The narrow region advantageously relaxes the manufacturing tolerances, which otherwise require close alignment of the upper polysilicon trench gate to the body-drain junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.