Image sensor with low electrical cross-talk
US8357984B2 · kind B2 · utility
13Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Apr 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An array of pixels is formed using a substrate, where each pixel has a substrate having a backside and a frontside that includes metalization layers, a photodiode formed in the substrate, frontside P-wells formed using frontside processing that are adjacent to the photosensitive region, and an N-type region formed in the substrate below the photodiode. The N-type region is formed in a region of the substrate below the photodiode and is formed at least in part in a region of the substrate that is deeper than the depth of the frontside P-wells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.