Packaged gallium nitride material transistors and methods associated with the same
US8358005B2 · kind B2 · utility
2Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2008 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jul 22, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides semiconductor material (e.g., gallium nitride material) devices (e.g., transistors) and methods associated with the same. The devices may be supported within a package that is formed, in part, of a polymeric material. In other embodiments, the devices may be mounted to a support (e.g., circuit board) and a polymeric material may encapsulate a portion of the device extending from the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.