Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
US8358458B2 · kind B2 · utility
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Key dates
| Filing date | Nov 4, 2010 |
| Grant date | Jan 22, 2013 |
| Priority date | — |
| Expiry date | Jan 4, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24917
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.