Polishing slurry, method of producing same, and method of polishing substrate
US8361177B2 · kind B2 · utility
0Cited by
13References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 11, 2008 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 24, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Disclosed is a polishing slurry, particularly, a slurry for chemical mechanical polishing, which is used in a chemical mechanical polishing process for flattening a semiconductor laminate. More particularly, the present invention provides a method of producing a slurry which has high removal selectivity to a nitride layer used as a barrier film in a shallow trench isolation CMP process needed to fabricate ultra highly integrated semiconductors of 256 mega D-RAM or more (Design rule of 0.13 μm or less) and which decreases the occurrence of scratches on a flattened surface, and a method of polishing a substrate using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.