Wet clean compositions for CoWP and porous dielectrics
US8361237B2 · kind B2 · utility
20Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2009 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Nov 24, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention is a formulation for wet clean removal of post etch and ash residue from a semiconductor substrate having a CoWP feature, comprising; A method of using the formulation is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.