Chemically amplified positive photoresist composition and pattern forming process
US8361693B2 · kind B2 · utility
21Cited by
12References
10Claims
0Family size
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Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Mar 25, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polymer comprising a high proportion of aromatic ring structure-containing units and containing an aromatic sulfonic acid sulfonium salt on a side chain is used to form a chemically amplified positive photoresist composition which is effective in forming a resist pattern having high etch resistance. The polymer overcomes the problems of dissolution in solvents for polymerization and purification and in resist solvents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.