Method of manufacturing vertical gallium nitride based light emitting diode
US8361816B2 · kind B2 · utility
20Cited by
10References
11Claims
0Family size
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Key dates
| Filing date | Dec 6, 2006 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.