Graphene nanoribbons, method of fabrication and their use in electronic devices
US8361853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a semiconductor structure including a nanoribbon-containing layer of alternating graphene nanoribbons separated by alternating insulating ribbons. The alternating graphene nanoribbons are parallel to a surface of an underlying substrate and, in some embodiments, might be oriented along crystallographic directions of the substrate. The alternating insulating ribbons may comprise hydrogenated graphene, i.e., graphane, fluorinated graphene, or fluorographene. The semiconductor structure mentioned above can be formed by selectively converting portions of an initial graphene layer into alternating insulating ribbons, while the non-converted portions of the initial graphene form the alternating graphene nanoribbons. Semiconductor devices such as, for example, field effect transistors, can be formed atop the semiconductor structure provided in the present disclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.