Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy

US8361858B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Stephan Kronholz · Dresden, DE
• Andreas Naumann · Neu-Ulm, DE
• Gunda Beernink · Dresden, DE

Key dates

• Filing date: Jan 25, 2010
• Grant date: Jan 29, 2013
• Expiry date: Jun 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0133

Abstract

The growth rate in a selective epitaxial growth process for depositing a threshold adjusting semiconductor alloy, such as a silicon/germanium alloy, may be enhanced by performing a plasma-assisted etch process prior to performing the selective epitaxial growth process. For example, a mask layer may be patterned on the basis of the plasma-assisted etch process, thereby simultaneously providing superior device topography during the subsequent growth process. Hence, the threshold adjusting material may be deposited with enhanced thickness uniformity, thereby reducing overall threshold variability.