Multiple precursor showerhead with by-pass ports
US8361892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Aug 10, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.