Barrier layer for copper interconnect
US8361900B2 · kind B2 · utility
33Cited by
7References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | May 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A copper interconnect includes a copper layer formed in a dielectric layer. A liner is formed between the copper layer and the dielectric layer. A barrier layer is formed at the boundary between the liner and the dielectric layer. The barrier layer is a metal oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.