Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same
US8362454B2 · kind B2 · utility
15Cited by
1References
35Claims
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Key dates
| Filing date | Dec 12, 2008 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 7, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
A resistive random access memory and a method for fabricating the same are provided. The method includes providing a bottom electrode formed on a substrate. A metal oxide layer is formed on the bottom electrode. An oxygen atom gettering layer is formed on the metal oxide layer. A top electrode is formed on the oxygen atom gettering layer. The previous mentioned structure is subjected to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, thus leaving a plurality of oxygen vacancies of the metal oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.