Semiconductor device
US8362519B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 9, 2011 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
The present teachings provide a semiconductor device comprising: an IGBT element region, a diode element region and a boundary region provided between the IGBT element region and the diode element region are formed in one semiconductor substrate. The boundary region comprises a second conductivity type first diffusion region, a first conductivity type second diffusion region, and a second conductivity type third diffusion region. A first drift region of the IGBT element region contiguously contacts the first diffusion region of the boundary region, and a second drift region of the diode element region contiguously contacts the first diffusion region of the boundary region. A first body region of the IGBT element region contiguously contacts the second diffusion region of the boundary region, and a second body region of the diode element region contiguously contacts the second diffusion region of the boundary region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.