Faceted EPI shape and half-wrap around silicide in S/D merged FinFET

US8362574B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Hirohisa Kawasaki · Yorktown Heights, US
• Chung-Hsun Lin · White Plains, US

Key dates

• Filing date: Jun 4, 2010
• Grant date: Jan 29, 2013
• Expiry date: Jan 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

FinFETs and methods of making FinFETs are provided. The FinFET contains two or more fins over a semiconductor substrate; two or more epitaxial layers over side surfaces of the fins; and metal-semiconductor compounds over an upper surfaces of the epitaxial layers. The fin has side surfaces that are substantially vertical relative to the upper surface of the semiconductor substrate. The epitaxial layer has an upper surface that extends at an oblique angle with respect to the side surface of the fin. The FinFET can contain a contact over the metal-semiconductor compounds.