Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer
US8362580B2 · kind B2 · utility
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Key dates
| Filing date | Dec 8, 2009 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Jul 10, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method for forming a magnetic tunnel junction (MTJ) storage element utilizes a composite free layer structure. The MTJ element includes a stack comprising a pinned layer, a barrier layer, and a composite free layer. The composite free layer includes a first free layer, a superparamagnetic layer and a nonmagnetic spacer layer interspersed between the first free layer and the superparamagnetic layer. A thickness of the spacer layer controls a manner of magnetic coupling between the first free layer and the superparamagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.