Power semiconductor component including a potential probe
US8362590B2 · kind B2 · utility
1Cited by
3References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 27, 2010 |
| Grant date | Jan 29, 2013 |
| Priority date | — |
| Expiry date | Dec 27, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A power semiconductor component including a semiconductor body and two load terminals is provided. Provided furthermore is a potential probe positioned to tap an electric intermediate potential of the semiconductor body at a tap location of the semiconductor body for an electric voltage applied across the two load terminals, the intermediate potential being intermediate to the electric potentials of the two load terminals, but differing from each of the two electric potentials of the two load terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.